Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
High Frequency Measurements and Simulations of SiC MESFETs up to 250^oC
High Frequency Measurements and Simulations of SiC MESFETs up to 250^oC
High Frequency Measurements and Simulations of SiC MESFETs up to 250^oC
Liu, W. (Autor:in) / Zetterling, C. M. (Autor:in) / Ostling, M. (Autor:in) / Eriksson, J. (Autor:in) / Rorsman, N. (Autor:in) / Zirath, H. (Autor:in)
MATERIALS SCIENCE FORUM ; 457/460 ; 1209-1212
01.01.2004
4 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
620.11
© Metadata Copyright the British Library Board and other contributors. All rights reserved.
SiC MESFETs for High-Frequency Applications
British Library Online Contents | 2005
|High-Frequency SiC MESFETs with Silicon Dioxide/Silicon Nitride Passivation
British Library Online Contents | 2006
|Investigation of the Scalability of 4H-SiC MESFETs for High Frequency Applications
British Library Online Contents | 2004
|Surface Control of 4H-SiC MESFETs
British Library Online Contents | 2002
|High Power High Efficiency Lateral Epitaxy MESFETs in Silicon Carbide
British Library Online Contents | 2006
|