Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
Edge Termination Technique for SiC Power Devices
Edge Termination Technique for SiC Power Devices
Edge Termination Technique for SiC Power Devices
Kim, H. W. (Autor:in) / Bahng, W. (Autor:in) / Song, G. H. (Autor:in) / Kim, S. C. (Autor:in) / Kim, N. K. (Autor:in) / Kim, E. D. (Autor:in)
MATERIALS SCIENCE FORUM ; 457/460 ; 1241-1244
01.01.2004
4 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
620.11
© Metadata Copyright the British Library Board and other contributors. All rights reserved.
A Highly Effective Edge Termination Design for SiC Planar High Power Devices
British Library Online Contents | 2004
|A robust and area-efficient guard ring edge termination technique for 4H-SiC power MOSFETs
British Library Online Contents | 2017
|Novel Buried Field Rings Edge Termination for 4H-SiC High-Voltage Devices
British Library Online Contents | 2003
|Effective Edge Termination Design in SiC VJFET
British Library Online Contents | 2005
|WIND AND WATER RESISTANT BACK WRAP ROOF EDGE TERMINATION
Europäisches Patentamt | 2018
|