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Development of 10 kV 4H-SiC Power DMOSFETs
Development of 10 kV 4H-SiC Power DMOSFETs
Development of 10 kV 4H-SiC Power DMOSFETs
Ryu, S. H. (Autor:in) / Agarwal, A. (Autor:in) / Krishnaswami, S. (Autor:in) / Richmond, J. (Autor:in) / Palmour, J. (Autor:in)
MATERIALS SCIENCE FORUM ; 457/460 ; 1385-1388
01.01.2004
4 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
620.11
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