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4H-SiC Self-Aligned Implant-Diffused Structure for Power DMOSFETs
4H-SiC Self-Aligned Implant-Diffused Structure for Power DMOSFETs
4H-SiC Self-Aligned Implant-Diffused Structure for Power DMOSFETs
Suvorov, A. V. (Autor:in) / Lipkin, L. A. (Autor:in) / Johnson, G. M. (Autor:in) / Singh, R. (Autor:in) / Palmour, J. W. (Autor:in)
MATERIALS SCIENCE FORUM ; 338/342 ; 1275-1278
01.01.2000
4 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
620.11
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