Self-separation of two-inch-diameter freestanding GaN by hydride vapor phase epitaxy and heat treatment of sapphire

Li, X. / Wu, J. / Liu, N. et al. | British Library Online Contents | 2014

InGaN/GaN/AlGaN-based laser diodes grown on epitaxially laterally overgrown GaN

Nakamura, S. | British Library Online Contents | 1999

Morphological characterization of selectively overgrown GaN via lateral epitaxy

Wang, Y. G. / Zhang, Z. / Dravid, V. P. et al. | British Library Online Contents | 2002

The role of inversion domain boundaries in fabricating crack-free GaN films on sapphire substrates by hydride vapor phase epitaxy

Ahn, Y. N. / Lee, S. H. / Lim, S. K. et al. | British Library Online Contents | 2015

Selective area growth and epitaxial lateral overgrowth of GaN by metalorganic vapor phase epitaxy and hydride vapor phase epitaxy

Hiramatsu, K. / Matsushima, H. / Shibata, T. et al. | British Library Online Contents | 1999