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Uniformity Improvement in SiC Epitaxial Growth by using Si-Condensation
Uniformity Improvement in SiC Epitaxial Growth by using Si-Condensation
Uniformity Improvement in SiC Epitaxial Growth by using Si-Condensation
Harada, S. (Autor:in) / Nakayama, K. (Autor:in) / Sasaki, M. (Autor:in) / Shiomi, H. (Autor:in)
MATERIALS SCIENCE FORUM ; 457/460 ; 225-228
01.01.2004
4 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
620.11
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