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Uniformity Improvement in SiC Epitaxial Growth by using Si-Condensation

Harada, S. / Nakayama, K. / Sasaki, M. / Shiomi, H.

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Uniformity Improvement in SiC Epitaxial Growth by using Si-Condensation

Harada, S. / Nakayama, K. / Sasaki, M. / Shiomi, H.

Uniformity Improvement in SiC Epitaxial Growth by using Si-Condensation

Harada, S. / Nakayama, K. / Sasaki, M. / Shiomi, H.

Access

Access via TIB

Check availability in my library

Order at Subito €

Page navigation

Document information

Similar titles

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Document information

Title:

Uniformity Improvement in SiC Epitaxial Growth by using Si-Condensation

Contributors:

Harada, S. (author) / Nakayama, K. (author) / Sasaki, M. (author) / Shiomi, H. (author)

Published in:

MATERIALS SCIENCE FORUM ; 457/460 ; 225-228

Publication date:

2004-01-01

Size:

4 pages

ISSN:

0255-5476

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

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