Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
Development of a High Rate 4H-SiC Epitaxial Growth Technique Achieving Large-Area Uniformity
Development of a High Rate 4H-SiC Epitaxial Growth Technique Achieving Large-Area Uniformity
Development of a High Rate 4H-SiC Epitaxial Growth Technique Achieving Large-Area Uniformity
Ito, M. (Autor:in) / Storasta, L. (Autor:in) / Tsuchida, H. (Autor:in)
MATERIALS SCIENCE FORUM ; 600/603 ; 111-114
01.01.2009
4 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
620.11
© Metadata Copyright the British Library Board and other contributors. All rights reserved.
Growth Rate and Thickness Uniformity of Epitaxial Graphene
| British Library Online Contents | 2010
Achieving and validating powder blend uniformity
| British Library Conference Proceedings | 1998
Experiment and Modeling of the Large-Area Etching and Growth Rate of Epitaxial SiC
| British Library Online Contents | 2003
Uniformity Improvement in SiC Epitaxial Growth by using Si-Condensation
| British Library Online Contents | 2004
Uniformity Improvement in SiC Epitaxial Growth by Horizontal Hot-Wall CVD
| British Library Online Contents | 2003