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Morphological Evolution of SiC(0001) Surfaces without Ambient Gas by High Temperature Annealing in High-Vacuum
Morphological Evolution of SiC(0001) Surfaces without Ambient Gas by High Temperature Annealing in High-Vacuum
Morphological Evolution of SiC(0001) Surfaces without Ambient Gas by High Temperature Annealing in High-Vacuum
Yasushi, A. (Autor:in) / Sano, N. (Autor:in) / Kaneko, T. (Autor:in)
MATERIALS SCIENCE FORUM ; 457/460 ; 403-406
01.01.2004
4 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
620.11
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