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    Morphological Evolution of SiC(0001) Surfaces without Ambient Gas by High Temperature Annealing in High-Vacuum

    New search for: Yasushi, A.
    New search for: Sano, N.
    New search for: Kaneko, T.

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    Morphological Evolution of SiC(0001) Surfaces without Ambient Gas by High Temperature Annealing in High-Vacuum

    New search for: Yasushi, A.
    New search for: Sano, N.
    New search for: Kaneko, T.

    Access

    Access via TIB
    Check availability in my library
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    Morphological Evolution of SiC(0001) Surfaces without Ambient Gas by High Temperature Annealing in High-Vacuum

    New search for: Yasushi, A.
    New search for: Sano, N.
    New search for: Kaneko, T.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Access

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    Document information
    Title:

    Morphological Evolution of SiC(0001) Surfaces without Ambient Gas by High Temperature Annealing in High-Vacuum

    Contributors:

    Yasushi, A. (author) / Sano, N. (author) / Kaneko, T. (author)

    Published in:

    MATERIALS SCIENCE FORUM ; 457/460 ; 403-406

    Publication date:

    2004-01-01

    Size:

    4 pages

    ISSN:

    0255-5476

    Type of media:

    Article (Journal)

    Type of material:

    Print

    Language:

    English

    Classification:

    DDC:  620.11

    © Metadata Copyright the British Library Board and other contributors. All rights reserved.

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