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Si-TiO2 interface evolution at prolonged annealing in low vacuum or N2O ambient
Si-TiO2 interface evolution at prolonged annealing in low vacuum or N2O ambient
Si-TiO2 interface evolution at prolonged annealing in low vacuum or N2O ambient
Erkov, V. G. (Autor:in) / Devyatova, S. F. (Autor:in) / Molodstova, E. L. (Autor:in) / Malsteva, T. V. (Autor:in) / Yanovskii, U. A. (Autor:in)
APPLIED SURFACE SCIENCE ; 166 ; 51-56
01.01.2000
6 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
621.35
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