Determination of Intrinsic Defects in High-Purity Semi-Insulating 4H-SiC by Discharge Current Transient Spectroscopy

Matsuura, H. / Takahashi, M. / Kagawa, Y. et al. | British Library Online Contents | 2009

Optically Induced Transitions among Point Defects in High Purity and Vanadium-Doped Semi-Insulating 4H SiC

Zvanut, M. E. / Konovalov, V. V. / Mitchel, W. C. et al. | British Library Online Contents | 2004

4H-SiC Planar MESFETs on High-Purity Semi-Insulating Substrates

Yim, J. H. / Song, H. K. / Moon, J. H. et al. | British Library Online Contents | 2007

Deep Levels Observed in High-Purity Semi-Insulating 4H-SiC

Alfieri, G. / Kimoto, T. / Pensl, G. | British Library Online Contents | 2010

Defects in Semi-Insulating SiC Substrates

Son, N. T. / Magnusson, B. / Zolnai, Z. et al. | British Library Online Contents | 2003