Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
Radiotracer Investigation of Gadolinium Induced Deep Levels in Hexagonal Silicon Carbide
Radiotracer Investigation of Gadolinium Induced Deep Levels in Hexagonal Silicon Carbide
Radiotracer Investigation of Gadolinium Induced Deep Levels in Hexagonal Silicon Carbide
Pasold, G. (Autor:in) / Albrecht, F. (Autor:in) / Hulsen, C. (Autor:in) / Sielemann, R. (Autor:in) / Zeitz, W. D. (Autor:in) / Witthuhn, W. (Autor:in)
MATERIALS SCIENCE FORUM ; 457/460 ; 783-786
01.01.2004
4 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
620.11
© Metadata Copyright the British Library Board and other contributors. All rights reserved.
Europium Induced Deep Levels in Hexagonal Silicon Carbide
British Library Online Contents | 2006
|Sputtering effects in hexagonal silicon carbide
British Library Online Contents | 1995
|Deep levels in silicon carbide Schottky diodes
British Library Online Contents | 2002
|Damage-Free Surface Modification of Hexagonal Silicon Carbide Wafers
British Library Online Contents | 2000
|3d-Transition Metals in Cubic and Hexagonal Silicon Carbide
British Library Online Contents | 2005
|