Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
O~2^+ versus Cs^+ for high depth resolution depth profiling of III-V nitride-based semiconductor devices
O~2^+ versus Cs^+ for high depth resolution depth profiling of III-V nitride-based semiconductor devices
O~2^+ versus Cs^+ for high depth resolution depth profiling of III-V nitride-based semiconductor devices
Kachan, M. (Autor:in) / Hunter, J. (Autor:in) / Kouzminov, D. (Autor:in) / Pivovarov, A. (Autor:in) / Gu, J. (Autor:in) / Stevie, F. (Autor:in) / Griffis, D. (Autor:in)
APPLIED SURFACE SCIENCE ; 231/232 ; 684-687
01.01.2004
4 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
621.35
© Metadata Copyright the British Library Board and other contributors. All rights reserved.
British Library Online Contents | 2004
|Towards quantitative depth profiling with high spatial and high depth resolution
British Library Online Contents | 2008
|Depth profiling of emerging materials for semiconductor devices
British Library Online Contents | 2006
|Approaching the limits of high resolution depth profiling
British Library Online Contents | 1993
|Approaching the limits of high resolution depth profiling
British Library Online Contents | 1993
|