Inhomogeneous broadening arising from interface fluctuations in strained InxGa1-xAs/GaAs and (InuGa1-uAs)v(InP)1-v/InP quantum wells: Fid-Bau Portal

Inhomogeneous broadening arising from interface fluctuations in strained InxGa1-xAs/GaAs and (InuGa1-uAs)v(InP)1-v/InP quantum wells

Oliveira, C. L. / Freire, J. A. / Freire, V. N. / Farias, G. A.

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Inhomogeneous broadening arising from interface fluctuations in strained InxGa1-xAs/GaAs and (InuGa1-uAs)v(InP)1-v/InP quantum wells

Oliveira, C. L. / Freire, J. A. / Freire, V. N. / Farias, G. A.

Inhomogeneous broadening arising from interface fluctuations in strained InxGa1-xAs/GaAs and (InuGa1-uAs)v(InP)1-v/InP quantum wells

Oliveira, C. L. / Freire, J. A. / Freire, V. N. / Farias, G. A.

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Document information

Title:

Inhomogeneous broadening arising from interface fluctuations in strained InxGa1-xAs/GaAs and (InuGa1-uAs)v(InP)1-v/InP quantum wells

Contributors:

Oliveira, C. L. (author) / Freire, J. A. (author) / Freire, V. N. (author) / Farias, G. A. (author)

Published in:

APPLIED SURFACE SCIENCE ; 234 ; 38-44

Publication date:

2004-01-01

Size:

7 pages

ISSN:

0169-4332

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 621.35

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