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Enhanced tunneling in stacked gate dielectrics with ultra-thin HfO2 layers sandwiched between thicker SiO2 layers
Enhanced tunneling in stacked gate dielectrics with ultra-thin HfO2 layers sandwiched between thicker SiO2 layers
Enhanced tunneling in stacked gate dielectrics with ultra-thin HfO2 layers sandwiched between thicker SiO2 layers
Hinkle, C. L. (Autor:in) / Fulton, C. (Autor:in) / Nemanich, R. J. (Autor:in) / Lucovsky, G. (Autor:in)
APPLIED SURFACE SCIENCE ; 234 ; 240-245
01.01.2004
6 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
621.35
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