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Enhanced tunneling in stacked gate dielectrics with ultra-thin HfO2 layers sandwiched between thicker SiO2 layers

Hinkle, C. L. / Fulton, C. / Nemanich, R. J. / Lucovsky, G.

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Enhanced tunneling in stacked gate dielectrics with ultra-thin HfO2 layers sandwiched between thicker SiO2 layers

Hinkle, C. L. / Fulton, C. / Nemanich, R. J. / Lucovsky, G.

Enhanced tunneling in stacked gate dielectrics with ultra-thin HfO2 layers sandwiched between thicker SiO2 layers

Hinkle, C. L. / Fulton, C. / Nemanich, R. J. / Lucovsky, G.

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Check availability in my library

Order at Subito €

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Document information

Title:

Enhanced tunneling in stacked gate dielectrics with ultra-thin HfO2 layers sandwiched between thicker SiO2 layers

Contributors:

Hinkle, C. L. (author) / Fulton, C. (author) / Nemanich, R. J. (author) / Lucovsky, G. (author)

Published in:

APPLIED SURFACE SCIENCE ; 234 ; 240-245

Publication date:

2004-01-01

Size:

6 pages

ISSN:

0169-4332

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 621.35

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