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Reductions in interface defects, Dit, by post-oxidation plasma-assisted nitridation of GaN-SiO2 interfaces in MOS devices
Reductions in interface defects, Dit, by post-oxidation plasma-assisted nitridation of GaN-SiO2 interfaces in MOS devices
Reductions in interface defects, Dit, by post-oxidation plasma-assisted nitridation of GaN-SiO2 interfaces in MOS devices
Bae, C. (Autor:in) / Lucovsky, G. (Autor:in)
APPLIED SURFACE SCIENCE ; 234 ; 475-479
01.01.2004
5 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
621.35
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