Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
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Strain relaxation of epitaxial CoSi2 and SiGe layers in cap-Si/Si0.83Ge0.17/Si(001) and epi-CoSi2/Si0.83Ge0.17/Si(001) structures
Strain relaxation of epitaxial CoSi2 and SiGe layers in cap-Si/Si0.83Ge0.17/Si(001) and epi-CoSi2/Si0.83Ge0.17/Si(001) structures
Strain relaxation of epitaxial CoSi2 and SiGe layers in cap-Si/Si0.83Ge0.17/Si(001) and epi-CoSi2/Si0.83Ge0.17/Si(001) structures
Shin, D. O. (Autor:in) / Sardela, M. R. (Autor:in) / Ban, S. H. (Autor:in) / Lee, N. E. (Autor:in) / Shim, K. H. (Autor:in)
APPLIED SURFACE SCIENCE ; 237 ; 139-145
01.01.2004
7 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
621.35
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