Depth profiled porosity and microstructure evolution studied by positron annihilation and Raman spectroscopy in SiOCH low-k films: Fid-Bau Portal

Depth profiled porosity and microstructure evolution studied by positron annihilation and Raman spectroscopy in SiOCH low-k films

Macchi, C. / Mariotto, G. / Karwasz, G. P. / Zecca, A. / Bettonte, M. / Brusa, R. S.

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Depth profiled porosity and microstructure evolution studied by positron annihilation and Raman spectroscopy in SiOCH low-k films

Macchi, C. / Mariotto, G. / Karwasz, G. P. / Zecca, A. / Bettonte, M. / Brusa, R. S.

Depth profiled porosity and microstructure evolution studied by positron annihilation and Raman spectroscopy in SiOCH low-k films

Macchi, C. / Mariotto, G. / Karwasz, G. P. / Zecca, A. / Bettonte, M. / Brusa, R. S.

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Titel:

Depth profiled porosity and microstructure evolution studied by positron annihilation and Raman spectroscopy in SiOCH low-k films

Beteiligte:

Macchi, C. (Autor:in) / Mariotto, G. (Autor:in) / Karwasz, G. P. (Autor:in) / Zecca, A. (Autor:in) / Bettonte, M. (Autor:in) / Brusa, R. S. (Autor:in)

Erschienen in:

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING ; 7 ; 289-294

Erscheinungsdatum:

01.01.2004

Format / Umfang:

6 pages

ISSN:

1369-8001

Medientyp:

Aufsatz (Zeitschrift)

Format:

Sprache:

Englisch

Klassifikation:

DDC: 621.38152

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