Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
Growth and characterization of strain-relaxed SiGe buffer layers on Si(001) substrates with pure-edge misfit dislocations
Growth and characterization of strain-relaxed SiGe buffer layers on Si(001) substrates with pure-edge misfit dislocations
Growth and characterization of strain-relaxed SiGe buffer layers on Si(001) substrates with pure-edge misfit dislocations
Taoka, N. (Autor:in) / Sakai, A. (Autor:in) / Egawa, T. (Autor:in) / Nakatsuka, O. (Autor:in) / Zaima, S. (Autor:in) / Yasuda, Y. (Autor:in)
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING ; 8 ; 131-135
01.01.2005
5 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
621.38152
© Metadata Copyright the British Library Board and other contributors. All rights reserved.
Surface smoothing of SiGe strain-relaxed buffer layers by chemical mechanical polishing
British Library Online Contents | 2002
|Compressively strained Ge channels on relaxed SiGe buffer layers
British Library Online Contents | 2003
|Resonant tunneling in Si-SiGe superlattices on relaxed buffer substrates
British Library Online Contents | 2004
|Relaxed SiGe buffer layer growth with point defect injection
British Library Online Contents | 2000
|Matrix effects in SIMS depth profiles of SiGe relaxed buffer layers
British Library Online Contents | 2004
|