Growth and characterization of strain-relaxed SiGe buffer layers on Si(001) substrates with pure-edge misfit dislocations: Fid-Bau Portal

Growth and characterization of strain-relaxed SiGe buffer layers on Si(001) substrates with pure-edge misfit dislocations

Taoka, N. / Sakai, A. / Egawa, T. / Nakatsuka, O. / Zaima, S. / Yasuda, Y.

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Growth and characterization of strain-relaxed SiGe buffer layers on Si(001) substrates with pure-edge misfit dislocations

Taoka, N. / Sakai, A. / Egawa, T. / Nakatsuka, O. / Zaima, S. / Yasuda, Y.

Growth and characterization of strain-relaxed SiGe buffer layers on Si(001) substrates with pure-edge misfit dislocations

Taoka, N. / Sakai, A. / Egawa, T. / Nakatsuka, O. / Zaima, S. / Yasuda, Y.

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Document information

Title:

Growth and characterization of strain-relaxed SiGe buffer layers on Si(001) substrates with pure-edge misfit dislocations

Contributors:

Taoka, N. (author) / Sakai, A. (author) / Egawa, T. (author) / Nakatsuka, O. (author) / Zaima, S. (author) / Yasuda, Y. (author)

Published in:

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING ; 8 ; 131-135

Publication date:

2005-01-01

Size:

5 pages

ISSN:

1369-8001

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 621.38152

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