Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
Accurate modeling of low-cost SiGe:C-HBTs using adaptive neuro-fuzzy inference system
Accurate modeling of low-cost SiGe:C-HBTs using adaptive neuro-fuzzy inference system
Accurate modeling of low-cost SiGe:C-HBTs using adaptive neuro-fuzzy inference system
Chakravorty, A. (Autor:in) / Scholz, R. F. (Autor:in) / Senapati, B. (Autor:in) / Knoll, D. (Autor:in) / Fox, A. (Autor:in) / Garg, R. (Autor:in) / Maiti, C. K. (Autor:in)
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING ; 8 ; 307-311
01.01.2005
5 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
621.38152
© Metadata Copyright the British Library Board and other contributors. All rights reserved.
High performance SiGe:C HBTs using atomic layer base doping
| British Library Online Contents | 2004
Selective epitaxial growth of SiGe:C for high speed HBTs
| British Library Online Contents | 2004
High-frequency SiGe:C HBTs with elevated extrinsic base regions
| British Library Online Contents | 2005
Modeling water table depth using adaptive Neuro-Fuzzy Inference System
| Taylor & Francis Verlag | 2019
Circuit applications of high-performance SiGe:C HBTs integrated in BiCMOS technology
| British Library Online Contents | 2004