Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
SiC Super Junction Power Devices: Modeling and Analysis
SiC Super Junction Power Devices: Modeling and Analysis
SiC Super Junction Power Devices: Modeling and Analysis
Shen, Z. J. (Autor:in) / Cheng, X. (Autor:in) / Kang, B. (Autor:in) / So, K. (Autor:in) / Hshieh, I. (Autor:in) / Nipoti, R. / Poggi, A. / Scorzoni, A.
01.01.2005
4 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
620.11
© Metadata Copyright the British Library Board and other contributors. All rights reserved.
Development of SiC Super-Junction (SJ) Devices by Multi-Epitaxial Growth
British Library Online Contents | 2014
|Super-Junction Device Forward Characteristics and Switched Power Limitations
British Library Online Contents | 2002
|SiC Lateral Super-Junction Diodes Fabricated by Epitaxial Growth
British Library Online Contents | 2003
|Major Junction Structure Verified by Modeling
ASCE | 2021
|Grayscale Junction Termination for High-Voltage SiC Devices
British Library Online Contents | 2009
|