Single Photolithography/Implantation 120-Zone Junction Termination Extension for High-Voltage SiC Devices

Snook, M. / McNutt, T. / Kirby, C. et al. | British Library Online Contents | 2012

High Voltage Silicon Carbide Schottky Diodes with Single Zone Junction Termination Extension

Vassilevski, K. / Nikitina, I. / Horsfall, A. et al. | British Library Online Contents | 2007

High Voltage, Low On-Resistance 4H-SiC BJTs with Improved Junction Termination Extension

Ghandi, R. / Buono, B. / Domeij, M. et al. | British Library Online Contents | 2011

High Voltage SiC JBS Diodes with Multiple Zone Junction Termination Extension Using Single Etching Step

Deng, X.C. / Rao, C.Y. / Wei, J. et al. | British Library Online Contents | 2014

Novel Buried Field Rings Edge Termination for 4H-SiC High-Voltage Devices

Mihaila, A. / Udrea, F. / Godignon, P. et al. | British Library Online Contents | 2003