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Development of SiC Super-Junction (SJ) Devices by Multi-Epitaxial Growth
Development of SiC Super-Junction (SJ) Devices by Multi-Epitaxial Growth
Development of SiC Super-Junction (SJ) Devices by Multi-Epitaxial Growth
Kosugi, R. (Autor:in) / Sakuma, Y. (Autor:in) / Kojima, K. (Autor:in) / Itoh, S. (Autor:in) / Nagata, A. (Autor:in) / Yatsuo, T. (Autor:in) / Tanaka, Y. (Autor:in) / Okumura, H. (Autor:in) / Okumura, H. / Harima, H.
01.01.2014
6 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
620.11
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