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High-Purity Versus High-Defect-Density Semiinsulating Substrates for SiC MESFET: Simulation of Device Characteristics
High-Purity Versus High-Defect-Density Semiinsulating Substrates for SiC MESFET: Simulation of Device Characteristics
High-Purity Versus High-Defect-Density Semiinsulating Substrates for SiC MESFET: Simulation of Device Characteristics
Koshka, Y. (Autor:in) / Sankin, I. (Autor:in) / Nipoti, R. / Poggi, A. / Scorzoni, A.
01.01.2005
4 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
620.11
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