Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
Physics of Hysteresis in MESFET Drain I-V Characteristics: Simulation Approach
Physics of Hysteresis in MESFET Drain I-V Characteristics: Simulation Approach
Physics of Hysteresis in MESFET Drain I-V Characteristics: Simulation Approach
Adjaye, J. (Autor:in) / Mazzola, M.S. (Autor:in) / Bauer, A.J. / Friedrichs, P. / Krieger, M. / Pensl, G. / Rupp, R. / Seyller, T.
01.01.2010
4 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
620.11
© Metadata Copyright the British Library Board and other contributors. All rights reserved.
The Role of Residual Source/Drain Implant Damage Traps on SiC MESFET Drain I-V Characteristics
British Library Online Contents | 2006
|British Library Online Contents | 2005
|RF characteristics for 4H-SiC MESFET with a clival gate
British Library Online Contents | 2015
|RF characteristics for 4H-SiC MESFET with a clival gate
British Library Online Contents | 2015
|RF characteristics for 4H-SiC MESFET with a clival gate
British Library Online Contents | 2015
|