Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
Low and High Temperature Performance of 600V 4H-SiC Epitaxial Emitter BJTs
Low and High Temperature Performance of 600V 4H-SiC Epitaxial Emitter BJTs
Low and High Temperature Performance of 600V 4H-SiC Epitaxial Emitter BJTs
Balachandran, S. (Autor:in) / Chow, T. P. (Autor:in) / Agarwal, A. (Autor:in) / Nipoti, R. / Poggi, A. / Scorzoni, A.
01.01.2005
4 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
620.11
© Metadata Copyright the British Library Board and other contributors. All rights reserved.
Current Gain Dependence on Emitter Width in 4H-SiC BJTs
| British Library Online Contents | 2006
Assessment of High and Low Temperature Performance of SiC BJTs
| British Library Online Contents | 2009
Simulations of Open Emitter Breakdown Voltage in SiC BJTs with Non Implanted JTE
| British Library Online Contents | 2009
| British Library Online Contents | 2004
High Temperature DC-DC Converter Performance Comparison Using SiC JFETs, BJTs and Si MOSFETs
| British Library Online Contents | 2007