Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
600V 4H-SiC RESURF-Type JFET
600V 4H-SiC RESURF-Type JFET
600V 4H-SiC RESURF-Type JFET
Fujikawa, K. (Autor:in) / Harada, S. (Autor:in) / Ito, A. (Autor:in) / Kimoto, T. (Autor:in) / Matsunami, H. (Autor:in)
MATERIALS SCIENCE FORUM ; 457/460 ; 1189-1192
01.01.2004
4 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
620.11
© Metadata Copyright the British Library Board and other contributors. All rights reserved.
A 600V Deep-Implanted Gate Vertical JFET
British Library Online Contents | 2004
|High Temperature Characteristics of 4H-SiC RESURF-Type JFET
British Library Online Contents | 2009
|Fast Switching Characteristics of 4H-SiC RESURF-Type JFET
British Library Online Contents | 2009
|Static and Dynamic Characterization of 20A, 600V SiC MOS-Enhanced JFET
British Library Online Contents | 2004
|Electrical Characteristics Temperature Dependence of 600V-Class Deep Implanted Gate Vertical JFET
British Library Online Contents | 2005
|