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Band Gap Shift Due to Nitrogen Doping, Composition Gas Pressure and Microwave Power of a-C:N Thin Films Grown by Newly-Developed Surface Wave Microwave Plasma CVD
Band Gap Shift Due to Nitrogen Doping, Composition Gas Pressure and Microwave Power of a-C:N Thin Films Grown by Newly-Developed Surface Wave Microwave Plasma CVD
Band Gap Shift Due to Nitrogen Doping, Composition Gas Pressure and Microwave Power of a-C:N Thin Films Grown by Newly-Developed Surface Wave Microwave Plasma CVD
Rusop, M. (Autor:in) / Adhikari, S. (Autor:in) / Omer, A. M. M. (Autor:in) / Adhikary, S. (Autor:in) / Uchida, H. (Autor:in) / Soga, T. (Autor:in) / Jimbo, T. (Autor:in) / Umeno, M. (Autor:in)
SURFACE REVIEW AND LETTERS ; 11 ; 559-562
01.01.2004
4 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
530.417
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