Band Gap Shift Due to Nitrogen Doping, Composition Gas Pressure and Microwave Power of a-C:N Thin Films Grown by Newly-Developed Surface Wave Microwave Plasma CVD: Fid-Bau Portal

Band Gap Shift Due to Nitrogen Doping, Composition Gas Pressure and Microwave Power of a-C:N Thin Films Grown by Newly-Developed Surface Wave Microwave Plasma CVD

Rusop, M. / Adhikari, S. / Omer, A. M. M. / Adhikary, S. / Uchida, H. / Soga, T. / Jimbo, T. / Umeno, M.

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Band Gap Shift Due to Nitrogen Doping, Composition Gas Pressure and Microwave Power of a-C:N Thin Films Grown by Newly-Developed Surface Wave Microwave Plasma CVD

Rusop, M. / Adhikari, S. / Omer, A. M. M. / Adhikary, S. / Uchida, H. / Soga, T. / Jimbo, T. / Umeno, M.

Band Gap Shift Due to Nitrogen Doping, Composition Gas Pressure and Microwave Power of a-C:N Thin Films Grown by Newly-Developed Surface Wave Microwave Plasma CVD

Rusop, M. / Adhikari, S. / Omer, A. M. M. / Adhikary, S. / Uchida, H. / Soga, T. / Jimbo, T. / Umeno, M.

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Title:

Band Gap Shift Due to Nitrogen Doping, Composition Gas Pressure and Microwave Power of a-C:N Thin Films Grown by Newly-Developed Surface Wave Microwave Plasma CVD

Contributors:

Rusop, M. (author) / Adhikari, S. (author) / Omer, A. M. M. (author) / Adhikary, S. (author) / Uchida, H. (author) / Soga, T. (author) / Jimbo, T. (author) / Umeno, M. (author)

Published in:

SURFACE REVIEW AND LETTERS ; 11 ; 559-562

Publication date:

2004-01-01

Size:

4 pages

ISSN:

0218-625X

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 530.417

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