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Vertical SiGe-based silicon-on-nothing (SON) technology for sub-30nm MOS devices
Vertical SiGe-based silicon-on-nothing (SON) technology for sub-30nm MOS devices
Vertical SiGe-based silicon-on-nothing (SON) technology for sub-30nm MOS devices
Thompson, P. E. (Autor:in) / Jernigan, G. (Autor:in) / Schulze, J. (Autor:in) / Eisele, I. (Autor:in) / Suligoj, T. (Autor:in)
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING ; 8 ; 51-57
01.01.2005
7 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
621.38152
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British Library Online Contents | 2005
|Low electrical resistivity polycrystalline SiGe films obtained by vertical LPCVD for MOS devices
British Library Online Contents | 2005
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