Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
Correlation between static characteristics and deep levels in InAlAs/InGaAs/InP HEMTS
Correlation between static characteristics and deep levels in InAlAs/InGaAs/InP HEMTS
Correlation between static characteristics and deep levels in InAlAs/InGaAs/InP HEMTS
Ben Salem, M. M. (Autor:in) / Bouzgarrou, S. (Autor:in) / Sghaier, N. (Autor:in) / Kalboussi, A. (Autor:in) / Souifi, A. (Autor:in)
MATERIALS SCIENCE AND ENGINEERING B -LAUSANNE- ; 127 ; 34-40
01.01.2006
7 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
620.11
© Metadata Copyright the British Library Board and other contributors. All rights reserved.
Influence of interface states and deep levels on output characteristics of InAlAs/InGaAs/InP HEMTs
| British Library Online Contents | 2008
I-V anomalies on InAlAs/InGaAs/InP HFETs and deep levels investigations
| British Library Online Contents | 2005
HBV deep mesa etching in InGaAs/InAlAs/AlAs heterostructures on InP substrate
| British Library Online Contents | 2005
Materials problems for the development of InGaAs/InAlAs HEMT technology
| British Library Online Contents | 1993
Comparison of InGaAs/InAlAs electroabsorption modulator structures on (100) and (111) InP substrates
| British Library Online Contents | 1999