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A technique for positron spectroscopy of monovacancies formed by low-temperature ion implantation of silicon
A technique for positron spectroscopy of monovacancies formed by low-temperature ion implantation of silicon
A technique for positron spectroscopy of monovacancies formed by low-temperature ion implantation of silicon
Mason, R. E. (Autor:in) / Coleman, P. G. (Autor:in)
APPLIED SURFACE SCIENCE ; 252 ; 3228-3230
01.01.2006
3 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
621.35
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