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A platform for research: civil engineering, architecture and urbanism
A technique for positron spectroscopy of monovacancies formed by low-temperature ion implantation of silicon
A technique for positron spectroscopy of monovacancies formed by low-temperature ion implantation of silicon
A technique for positron spectroscopy of monovacancies formed by low-temperature ion implantation of silicon
Mason, R. E. (author) / Coleman, P. G. (author)
APPLIED SURFACE SCIENCE ; 252 ; 3228-3230
2006-01-01
3 pages
Article (Journal)
English
DDC:
621.35
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