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Gate oxide integrity dependence on substrate characteristics and SiO2 thickness
Gate oxide integrity dependence on substrate characteristics and SiO2 thickness
Gate oxide integrity dependence on substrate characteristics and SiO2 thickness
Bonoli, F. (Autor:in) / Godio, P. (Autor:in) / Borionetti, G. (Autor:in) / Falster, R. (Autor:in)
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING ; 4 ; 145-148
01.01.2001
4 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
621.38152
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