Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
Photoluminescence analysis of intra-grain defects in cast-grown polycrystalline silicon wafers
Photoluminescence analysis of intra-grain defects in cast-grown polycrystalline silicon wafers
Photoluminescence analysis of intra-grain defects in cast-grown polycrystalline silicon wafers
Sugimoto, H. (Autor:in) / Tajima, M. (Autor:in) / Eguchi, T. (Autor:in) / Yamaga, I. (Autor:in) / Saitoh, T. (Autor:in)
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING ; 9 ; 102-106
01.01.2006
5 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
621.38152
© Metadata Copyright the British Library Board and other contributors. All rights reserved.
TEM Studies of Grain Boundary Structure in a Cast Polycrystalline Silicon
British Library Online Contents | 2005
|Interface Defects of Bonded Silicon Wafers
British Library Online Contents | 1995
|Carrier lifetime limitation defects in polycrystalline silicon ribbons grown on substrate (RGS)
British Library Online Contents | 2008
|British Library Online Contents | 1993
|Study of PbTe Epitaxial Layers Grown Directly Over Silicon Wafers
British Library Online Contents | 2002
|