A comparative analysis of thermal gate oxide on strained Si/relaxed SiGe layer for reliability prediction of strained Si MOSFETs

Lee, S. G. / Kim, Y. P. / Lee, H. L. et al. | British Library Online Contents | 2005

Boron diffusion in strained and strain-relaxed SiGe

Wang, C. C. / Sheu, Y. M. / Liu, S. et al. | British Library Online Contents | 2005

Compressively strained Ge channels on relaxed SiGe buffer layers

Bollani, M. / Muller, E. / Signoretti, S. et al. | British Library Online Contents | 2003

Relaxed SiGe buffer layer growth with point defect injection

Lyutovich, K. / Kasper, E. / Ernst, F. et al. | British Library Online Contents | 2000

High crystal quality strained Si0.5Ge0.5 layer with a thickness of up to 50 nm grown on the three-layer SiGe strain relaxed buffer

Zhao, Zhiqian / Li, Yongliang / Gu, Shihai et al. | British Library Online Contents | 2019