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High crystal quality strained Si0.5Ge0.5 layer with a thickness of up to 50 nm grown on the three-layer SiGe strain relaxed buffer
High crystal quality strained Si0.5Ge0.5 layer with a thickness of up to 50 nm grown on the three-layer SiGe strain relaxed buffer
High crystal quality strained Si0.5Ge0.5 layer with a thickness of up to 50 nm grown on the three-layer SiGe strain relaxed buffer
Zhao, Zhiqian (Autor:in) / Li, Yongliang (Autor:in) / Gu, Shihai (Autor:in) / Zhang, Qingzhu (Autor:in) / Wang, Guilei (Autor:in) / Li, Junjie (Autor:in) / Li, Yan (Autor:in) / Xu, Gaobo (Autor:in) / Ma, Xueli (Autor:in) / Wang, Xiaolei (Autor:in)
Materials science in semiconductor processing ; 99 ; 159-164
01.01.2019
6 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
621.38152
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