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Properties of Ga1-x Mnx N epilayers grown by plasma-assisted molecular beam epitaxy using Raman spectroscopy
Properties of Ga1-x Mnx N epilayers grown by plasma-assisted molecular beam epitaxy using Raman spectroscopy
Properties of Ga1-x Mnx N epilayers grown by plasma-assisted molecular beam epitaxy using Raman spectroscopy
Asghar, M. (Autor:in) / Hussain, I. (Autor:in) / Saleemi, F. (Autor:in) / Bustarret, E. (Autor:in) / Cibert, J. (Autor:in) / Kuroda, S. (Autor:in) / Marcet, S. (Autor:in) / Mariette, H. (Autor:in) / Bhatti, A. S. (Autor:in)
MATERIALS SCIENCE AND ENGINEERING B -LAUSANNE- ; 133 ; 102-107
01.01.2006
6 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
620.11
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