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High resolution X-ray diffraction of GaN grown on Si (111) by MOVPE
High resolution X-ray diffraction of GaN grown on Si (111) by MOVPE
High resolution X-ray diffraction of GaN grown on Si (111) by MOVPE
Chaaben, N. (Autor:in) / Boufaden, T. (Autor:in) / Fouzri, A. (Autor:in) / Bergaoui, M. S. (Autor:in) / Jani, B. E. (Autor:in)
APPLIED SURFACE SCIENCE ; 253 ; 241-245
01.01.2006
5 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
621.35
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