High resolution X-ray diffraction of GaN grown on Si (111) by MOVPE: Fid-Bau Portal

High resolution X-ray diffraction of GaN grown on Si (111) by MOVPE

Chaaben, N. / Boufaden, T. / Fouzri, A. / Bergaoui, M. S. / Jani, B. E.

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High resolution X-ray diffraction of GaN grown on Si (111) by MOVPE

Chaaben, N. / Boufaden, T. / Fouzri, A. / Bergaoui, M. S. / Jani, B. E.

High resolution X-ray diffraction of GaN grown on Si (111) by MOVPE

Chaaben, N. / Boufaden, T. / Fouzri, A. / Bergaoui, M. S. / Jani, B. E.

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Check availability in my library

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Document information

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Document information

Title:

High resolution X-ray diffraction of GaN grown on Si (111) by MOVPE

Contributors:

Chaaben, N. (author) / Boufaden, T. (author) / Fouzri, A. (author) / Bergaoui, M. S. (author) / Jani, B. E. (author)

Published in:

APPLIED SURFACE SCIENCE ; 253 ; 241-245

Publication date:

2006-01-01

Size:

5 pages

ISSN:

0169-4332

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 621.35

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