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Improved 4H-SiC MOS Interfaces Produced via Two Independent Processes: Metal Enhanced Oxidation and 1300^oC NO Anneal
Improved 4H-SiC MOS Interfaces Produced via Two Independent Processes: Metal Enhanced Oxidation and 1300^oC NO Anneal
Improved 4H-SiC MOS Interfaces Produced via Two Independent Processes: Metal Enhanced Oxidation and 1300^oC NO Anneal
Das, M. K. (Autor:in) / Hull, B. A. (Autor:in) / Krishnaswami, S. (Autor:in) / Husna, F. (Autor:in) / Haney, S. (Autor:in) / Lelis, A. J. (Autor:in) / Scozzie, C. J. (Autor:in) / Scofield, J. D. (Autor:in) / Devaty, R. P. / Larkin, D. J.
01.01.2006
4 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
620.11
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