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Improved 4H-SiC MOS Interfaces Produced via Two Independent Processes: Metal Enhanced Oxidation and 1300^oC NO Anneal
Improved 4H-SiC MOS Interfaces Produced via Two Independent Processes: Metal Enhanced Oxidation and 1300^oC NO Anneal
Improved 4H-SiC MOS Interfaces Produced via Two Independent Processes: Metal Enhanced Oxidation and 1300^oC NO Anneal
Das, M. K. (author) / Hull, B. A. (author) / Krishnaswami, S. (author) / Husna, F. (author) / Haney, S. (author) / Lelis, A. J. (author) / Scozzie, C. J. (author) / Scofield, J. D. (author) / Devaty, R. P. / Larkin, D. J.
2006-01-01
4 pages
Article (Journal)
English
DDC:
620.11
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