Comparative Study of 4H-SiC DMOSFETs with N~2O Thermal Oxide and Deposit Oxide with Post Oxidation Anneal

Yen, C.T. / Hung, C.C. / Mikhaylov, A. et al. | British Library Online Contents | 2014

Role of H~2 in Low Temperature Post-Oxidation Anneal for Gate Oxide on 6H-SiC

Raineri, V. / Lombardo, S. / Musumeci, P. et al. | British Library Online Contents | 2001

Development of the Novel Electron Bombardment Anneal System (EBAS) for SiC Post Ion Implantation Anneal

Shibagaki, M. / Kurematsu, Y. / Watanabe, F. et al. | British Library Online Contents | 2005

Investigation of sputtered indium-tin oxide/silicon interfaces: ion damage, hydrogen passivation and low-temperature anneal

Kuwano, K. / Ashok, S. | British Library Online Contents | 1997

Improved 4H-SiC MOS Interfaces Produced via Two Independent Processes: Metal Enhanced Oxidation and 1300^oC NO Anneal

Das, M. K. / Hull, B. A. / Krishnaswami, S. et al. | British Library Online Contents | 2006