Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
Numerical analysis of gate leakage current in AlGaN Schottky diodes
Numerical analysis of gate leakage current in AlGaN Schottky diodes
Numerical analysis of gate leakage current in AlGaN Schottky diodes
Osvald, J. (Autor:in)
APPLIED SURFACE SCIENCE ; 255 ; 793-795
01.01.2008
3 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
621.35
© Metadata Copyright the British Library Board and other contributors. All rights reserved.
High temperature current transport in gate oxides based (GaN)/AlGaN/GaN Schottky diodes
| British Library Online Contents | 2018
Origin of Leakage Current in SiC Schottky Barrier Diodes at High Temperature
| British Library Online Contents | 2004
Temperature dependence of current-voltage characteristics of Sn/p-GaTe Schottky diodes
| British Library Online Contents | 2003
Numerical Analysis of SiC Merged PiN Schottky Diodes
| British Library Online Contents | 2005
Correlation between Leakage Current and Ion-Irradiation Induced Defects in 4H-SiC Schottky Diodes
| British Library Online Contents | 2006