Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
Fabrication and Performance of 1.2 kV, 12.9 mOmegacm^2 4H-SiC Epilayer Channel MOSFET
Fabrication and Performance of 1.2 kV, 12.9 mOmegacm^2 4H-SiC Epilayer Channel MOSFET
Fabrication and Performance of 1.2 kV, 12.9 mOmegacm^2 4H-SiC Epilayer Channel MOSFET
Tarui, Y. (Autor:in) / Watanabe, T. (Autor:in) / Fujihira, K. (Autor:in) / Miura, N. (Autor:in) / Nakao, Y. (Autor:in) / Imaizumi, M. (Autor:in) / Sumitani, H. (Autor:in) / Takami, T. (Autor:in) / Ozeki, T. (Autor:in) / Oomori, T. (Autor:in)
Silicon Carbide and Related Materials - 2005 ; 1285-1288
MATERIALS SCIENCE FORUM ; 527/529
01.01.2006
4 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
620.11
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