Fabrication and Performance of 1.2 kV, 12.9 mOmegacm^2 4H-SiC Epilayer Channel MOSFET

Tarui, Y. / Watanabe, T. / Fujihira, K. et al. | British Library Online Contents | 2006

Thick Epilayer for Power Devices

Henry, A. / Hassan, J. / Pedersen, H. et al. | British Library Online Contents | 2007

Correlation between initial growth planarity and epilayer tilting in the vicinal GaAs/Si system

Riesz, F. / Varrio, J. / Pesek, A. et al. | British Library Online Contents | 1994

Fabrication of P-Channel MOSFETs on 4H-SiC C-Face

Okamoto, M. / Iijima, M. / Yatsuo, T. et al. | British Library Online Contents | 2011

Influence of precipitates on GaN epilayer quality

Kang, J. / Huang, Q. / Wang, Z. | British Library Online Contents | 2000