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    Fabrication and Performance of 1.2 kV, 12.9 mOmegacm^2 4H-SiC Epilayer Channel MOSFET

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    New search for: Watanabe, T.
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    Fabrication and Performance of 1.2 kV, 12.9 mOmegacm^2 4H-SiC Epilayer Channel MOSFET

    New search for: Tarui, Y.
    New search for: Watanabe, T.
    New search for: Fujihira, K.
    New search for: Miura, N.
    New search for: Nakao, Y.
    New search for: Imaizumi, M.
    New search for: Sumitani, H.
    New search for: Takami, T.
    New search for: Ozeki, T.
    New search for: Oomori, T.
    New search for: Devaty, R. P.
    New search for: Larkin, D. J.
    New search for: Saddow, S. E.

    Access

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    Fabrication and Performance of 1.2 kV, 12.9 mOmegacm^2 4H-SiC Epilayer Channel MOSFET

    New search for: Tarui, Y.
    New search for: Watanabe, T.
    New search for: Fujihira, K.
    New search for: Miura, N.
    New search for: Nakao, Y.
    New search for: Imaizumi, M.
    New search for: Sumitani, H.
    New search for: Takami, T.
    New search for: Ozeki, T.
    New search for: Oomori, T.
    New search for: Devaty, R. P.
    New search for: Larkin, D. J.
    New search for: Saddow, S. E.

    Access

    Access via TIB
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    Order at Subito €

    Access

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    Document information
    Title:

    Fabrication and Performance of 1.2 kV, 12.9 mOmegacm^2 4H-SiC Epilayer Channel MOSFET

    Contributors:

    Tarui, Y. (author) / Watanabe, T. (author) / Fujihira, K. (author) / Miura, N. (author) / Nakao, Y. (author) / Imaizumi, M. (author) / Sumitani, H. (author) / Takami, T. (author) / Ozeki, T. (author) / Oomori, T. (author)

    Published in:

    Silicon Carbide and Related Materials - 2005 ; 1285-1288

    MATERIALS SCIENCE FORUM ; 527/529

    Publication date:

    2006-01-01

    Size:

    4 pages

    ISSN:

    0255-5476

    Type of media:

    Article (Journal)

    Type of material:

    Print

    Language:

    English

    Classification:

    DDC:  620.11

    © Metadata Copyright the British Library Board and other contributors. All rights reserved.

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